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DC SQUID Magnetometer for characterizing the magnetic properties of bulk, thin film, spin-glass, and super-paramagnetic nanoparticle systems. ± 5T DC fields can be applied to samples from 5K to 400K, with a sensitivity of 1x10-7 EMU in the detected moment. |
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Vibrating sample magnetometer (VSM) for the rapid magnetic characterization of materials. Optional cryostat and oven allow temperature control from 5K to 1273K. Maximum field is ± 1.4T with a moment sensitivity of 10-5 EMU. |
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X-ray diffactometer (XRD) for the phase identification and structural characterization of powder, thin-film, composite and nanoparticle systems. Software is available for structural refinement and peak modeling for strain and particle-size estimation. |
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Scanning probe microscope (SPM) for the topological and structural characterization of surfaces and the imaging of lithographed structures and nanoparticle systems. By selecting the appropriate probes a variety of techniques are available: contact and tapping atomic force microscopy (AFM), lateral force microscopy (LFM) and magnetic force microscopy (MFM). |
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X-ray photoelectron spectroscopy (XPS) for the chemical characterization of surfaces. The small inelastic mean free path of photoelectrons-- < 1nm-- makes this an exceedingly surface sensitive probe of element species and chemical states. |
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Scanning electron microscopy (SEM) for the imaging of bulk, thin film, patterned and nanoparticle systems. Energy analysis of the secondary X-rays produced by the electron beam can be used to characterize the elemental composition of the regions imaged. |
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e-beam writing for nanolithography of devices. A focused electron beam is used to expose special resists for patterning devices down to a length scale of 30nm. This lithography tool is central to the fabrication of nanoconstrictions, Hall gradiometers and spin-injection devices. |
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Photolithography for microlithography of devices. An ultraviolet (UV) source is used to transfer the pattern of a mask onto a photoresist covered surface. Subsequent development and etching produce a structure in the shape of the mask. This lithography tool is used for the fabrication of larger structures (e.g. Hall crosses for magneto-transport measurements) and for the connections and contacts to nanolithographed structures. |
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Focused ion-beam lithography (FIB) uses a focused beam of gallium ions to directly machine structures. This allows the fabrication of devices that can not be fabricated using e-beam or photolithography due to complications with wet or reactive ion etching. |
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Dip-pen lithography uses a contact AFM tip to deliver chemicals directly to a surface in controlled patterns. This lithography technique is central to technologies that involve the self-assembly of nanostructures from nanoparticles and nanotubes in solution. |
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Thermal evaporation systems produce the gold, aluminum and lead thin-films essential to the fabrication of self-assembled structures using dip-pen lithography and tunneling junctions. |
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Molecular beam epitaxy (MBE) uses multiple shuttered effusion sources and e-beam sources to form multilayers and superlattices of magnetic metals and metal oxides. Electron diffraction (RHEED) allows for in situ monitoring of film quality and thickness. |
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A miniature e-beam evaporation system is devoted to the growth of EuS thin films. EuS is a half-metal of great interest to spintronics applications. |
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Reactive ion etching utilizes chemically reactive ions to etch lithographed structures. This technique is a compliment to chemical or "wet" etching. |
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Profilometry uses a stylus to scan across a sample profile its surface for the purpose of estimating the size of patterned structures or measuring film thickness. |
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Ellipsometry utilizes circularly polarized light to measure the thickness of smooth films on substrates. This is a totally noncontact technique for characterizing film thickness. |